60612 tkim/60910pa tkim tc-00002332 no. a1743-1/9 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 sft1450 n-channel power mosfet 40v, 21a, 28m , single tp/tp-fa stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. 1 3 2, 4 ordering number : ena1743a features ? on-resistance r ds (on)1=21m (typ.) ? input capacitance ciss=715pf(typ.) ? 4.5v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 40 v gate-to-source voltage v gss 20 v drain current (dc) i d 21 a drain current (pulse) i dp pw 10 s, duty cycle 1% 84 a allowable power dissipation p d 1w tc=25 c23w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-004 7003-004 t1450 lot no. tl product & package information ? package : tp ? package : tp-fa ? jeita, jedec : sc-64, to-251 ? jeita, jedec : sc-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : gate 2 : drain 3 : source 4 : drain tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : gate 2 : drain 3 : source 4 : drain tp-fa SFT1450-H sft1450-tl-h
sft1450 no. a1743-2/9 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 40 v zero-gate voltage drain current i dss v ds = 4 0v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.7 2.6 v forward transfer admittance | yfs | v ds =10v, i d = 10.5 a 5.4 s static drain-to-source on-state resistance r ds (on)1 i d =10.5a, v gs =10v 21 28 m r ds (on)2 i d =5.5a, v gs =4.5v 40 56 m input capacitance ciss v ds =20v, f=1mhz 715 pf output capacitance coss 85 pf reverse transfer capacitance crss 65 pf turn-on delay time t d (on) see speci ed test circuit. 10 ns rise time t r 42 ns turn-off delay time t d (off) 42 ns fall time t f 38 ns total gate charge qg v ds =20v, v gs =10v, i d =21a 14.4 nc gate-to-source charge qgs 3.8 nc gate-to-drain ?miller? charge qgd 3.1 nc diode forward voltage v sd i s =21a, v gs =0v 0.96 1.2 v switching time test circuit ordering information device package shipping memo SFT1450-H tp 500pcs./bag pb free and halogen free sft1450-tl-h tp-fa 700pcs./reel pw=10 s d.c. 1% p. g 50 g s d i d =10.5a r l =1.9 v dd =20v v out v in 10v 0v v in sft1450
sft1450 no. a1743-3/9 i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a --25 c tc=75 c 0 5 10 30 25 20 15 0 it15552 0.5 1.5 2.0 1.0 2.5 6.0 3.5 4.0 3.0 4.5 5.5 5.0 0 v ds =10v single pulse 25 c 25 c it15551 0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.8 1.6 2.0 0 21 5 7 1 17 15 13 11 9 3 6 8 2 18 19 20 16 14 12 10 4 v gs =3.5v 16.0v 10.0v 8.0v 6.0v 4.5v tc=25 c single pulse 4.0v tc= --25 c 75 c | y fs | -- i d r ds (on) -- v gs r ds (on) -- tc sw time -- i d gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds i s -- v sd 100 1000 3 2 2 3 7 5 7 5 2 10 3 7 2 3 5 100 7 5 2 2 0 90 80 70 60 40 50 20 30 10 2468 16 14 12 10 3579 15 13 11 it15553 040 30 20 35 25 51015 it15558 it15556 it15555 1.4 1.2 1.0 0.4 0.8 0.6 0.2 0.001 0.1 5 7 3 2 5 3 2 2 10 5 7 3 2 1.0 5 7 3 0.01 2 5 7 3 3 1.0 3 2 7 10 2 7 5 5 1.0 0.1 23 57 23 23 10 57 tc= --25 c 75 c 25 c tc=75 c 25 c --25 c v gs =0v single pulse f=1mhz coss ciss crss it15557 0.1 25 3 23 57 1.0 23 57 10 t d (off) t f t d (on) t r v dd =20v v gs =10v 3 i d =10.5a tc=25 c single pulse 5.5a it15554 --60 --40 --20 160 0 20 40 60 80 100 120 140 single pulse 0 80 30 40 10 20 60 70 50 v gs =10.0v , i d =10.5a v gs =4.5, i d =5.5a v ds =10v single pulse
sft1450 no. a1743-4/9 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v it15560 it15559 0246 12 10 14 816 0 2 1 4 6 8 3 5 7 9 10 0.1 1.0 2 3 5 7 2 3 5 7 2 2 3 5 7 10 0.1 i dp =84a(pw 10 s) i d =21a 10 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). tc=25 c single pulse 1.0 23 57 2 10 357 2 357 100 v ds =20v i d =21a 100 s drain current, i d -- a ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0 20 40 60 80 100 120 140 160 it15549 0.2 0.4 1.0 1.2 0.8 0.6 p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c it15550 30 20 25 23 15 10 5 0 0 20 40 60 80 100 120 140 160
sft1450 no. a1743-5/9 taping speci cation sft1450-tl-h
sft1450 no. a1743-6/9 outline drawing land pattern example sft1450-tl-h mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
sft1450 no. a1743-7/9 bag packing speci cation SFT1450-H
sft1450 no. a1743-8/9 outline drawing SFT1450-H mass (g) unit 0.315 * for reference mm
sft1450 ps no. a1743-9/9 note on usage : since the sft1450 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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